IRF7752

FET, MOSFET Arrays Overview

The IRF7752 is a dual N-channel HEXFET power MOSFET designed for battery and load management applications. It features an ultra-low on-resistance per silicon area, achieved through advanced processing techniques. The device is housed in a very small SOIC package with a low profile of less than 1.1mm. It is available in tape and reel packaging for automated assembly.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration
• Ultra-low on-resistance
• Very small SOIC package
• Low profile design

FET, MOSFET Arrays Applications

• Battery management systems
• Load management circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer source carefully as International Rectifier was acquired by Infineon. Confirm the specific suffix (e.g., GPBF, PBF) matches your requirements. Check current availability status as older IRF parts may be discontinued or superseded. Ensure the datasheet version corresponds to the actual component received.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints are critical due to its small SOIC footprint. The dual channel architecture simplifies circuit design for applications requiring two independent switches. Verify voltage and current ratings against the specific load requirements before integration.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family known for ruggedized device designs. It represents the transition period where International Rectifier products were integrated into Infineon's portfolio. The technology focuses on efficiency and reliability for power switching applications.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements like IRF7751 or IRF7705 if polarity differs. Consider newer Infineon equivalents such as OptiMOS series for improved performance. Verify pin compatibility and thermal characteristics when substituting.