IRF7905PBF

FET, MOSFET Arrays Overview

The IRF7905PBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It integrates two independent transistors, Q1 and Q2, optimized for different roles within synchronous rectification circuits. Q1 serves as the control FET with a maximum continuous drain current of 7.8 A at 25°C and a typical on-resistance of 17.4 mΩ. Q2 functions as the synchronous FET, offering higher current handling up to 8.9 A and lower resistance of 13.7 mΩ. Both devices feature a 30 V drain-to-source voltage rating, a ±20 V gate-to-source voltage limit, and a junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrating separate control and synchronous rectifier transistors
• Low static drain-to-source on-resistance for improved system efficiency
• Fully characterized avalanche voltage and current ratings for rugged operation
• Improved body diode reverse recovery characteristics

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in notebook computers
• Server power supply modules
• Graphics card voltage regulation
• Game console power distribution
• Set-top box DC-DC conversion

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific ordering suffix matches the required tape and reel or tube packaging format. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require dual P-channel MOSFETs in a single surface-mount footprint. The distinct electrical parameters between Q1 and Q2 allow designers to optimize both the high-side switch and the synchronous rectifier independently. Evaluate thermal management requirements based on the 62.5 °C/W junction-to-ambient thermal resistance.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon HEXFET family, utilizing advanced processing techniques to achieve low on-resistance per silicon area. The SO-8 package provides a compact solution suitable for modern consumer electronics and computing hardware where board real estate is limited compared to traditional through-hole packages.

FET, MOSFET Arrays Replacement Considerations

IRF7905TRLPBF

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in the IRF7905PBF?

Q1 is designated as the Control FET with a continuous drain current of 7.8 A and a typical RDS(on) of 17.4 mΩ. Q2 is the Synchronous FET, rated for 8.9 A with a lower typical RDS(on) of 13.7 mΩ.

Is the IRF7905PBF fully avalanche rated?

Yes, the datasheet specifies that the device is fully characterized for avalanche voltage and current, with single pulse avalanche energy ratings of 12 mJ for Q1 and 18 mJ for Q2.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) for the IRF7905PBF is +150°C.