IRF8910GTRPBF

FET, MOSFET Arrays Overview

The IRF8910GTRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20V drain-source voltage rating and a maximum continuous drain current of 10A at 25°C. The device exhibits a maximum on-resistance of 13.4mΩ at VGS=10V and 18.3mΩ at VGS=4.5V. Total gate charge is typically 7.4nC at 4.5V, with a gate-to-drain charge of 2.5nC. Thermal resistance junction-to-ambient is 62.5°C/W, supporting operation up to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact surface-mount package for space-constrained designs
• Ultra-low gate impedance facilitating efficient driver interface and switching performance
• Fully characterized avalanche voltage and current capabilities for robust transient handling

FET, MOSFET Arrays Applications

• Point-of-load converters in desktop computers
• Power stages for server motherboards
• Graphics card voltage regulation modules
• Game console power distribution systems
• Set-top box DC/DC conversion circuits

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix GTRPBF corresponds to tape-and-reel packaging when sourcing components. Confirm that the specific revision matches the required datasheet version for accurate electrical parameter alignment. Ensure compliance with lead-free and halogen-free material declarations as specified in the official documentation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low conduction losses at both 10V and 4.5V gate drive levels. The dual N-channel architecture allows for synchronous rectification or half-bridge configurations within a single footprint. Evaluate thermal management requirements based on the 62.5°C/W junction-to-ambient resistance for ambient temperature conditions.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, designed for high-efficiency power switching. The SO-8 form factor provides a balance between current handling capacity and board space efficiency compared to larger through-hole packages. It serves as a discrete solution for mid-range power conversion tasks in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for electrically equivalent dual N-channel MOSFETs with matching 20V ratings and SO-8 footprints. Verify pinout compatibility and thermal characteristics before substituting.