IRF8915TRPBF

$0.71

Description：MOSFET 2N-CH 20V 8.9A 8SO
Series：HEXFET®

SKU:5d330775fa02 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF8915TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 8.9A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF8915TRPBF

Description：MOSFET 2N-CH 20V 8.9A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：8.9A
Rds On (Max) @ Id, Vgs：18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：540pF @ 10V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF8915TRPBF

IRF8915TRPBF

FET, MOSFET Arrays Overview

The IRF8915TRPBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20V drain-to-source voltage rating and an 8.9A continuous drain current at 25°C. The maximum on-resistance is 18.3mΩ at VGS=10V. Total gate charge is typically 4.9nC. Operating junction temperature ranges from -55°C to +150°C with a maximum power dissipation of 2W.

FET, MOSFET Arrays Feature Summary

Dual configuration for compact POL converter designs
Ultra-low gate impedance for fast switching
Very low RDS(on) for high efficiency
Fully characterized avalanche voltage and current

FET, MOSFET Arrays Applications

POL converters in desktop computers
Server power supplies
Graphics cards
Game consoles
Set-top boxes

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact Infineon Technologies part number IRF8915TRPBF. Confirm the SO-8 package type and lead-free status. Ensure the datasheet version aligns with the required specifications before integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in a small footprint. Consider the 20V rating and 8.9A current limit. Evaluate thermal management needs due to the 2W power dissipation limit in the SO-8 package.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family, known for robust performance in power switching applications. The dual configuration allows for space-saving designs in point-of-load conversion systems where multiple channels are needed.

FET, MOSFET Arrays Replacement Considerations

Check for pin-compatible alternatives within the same HEXFET series. Verify that any substitute meets the 20V VDS and 8.9A ID requirements. Ensure the replacement maintains similar gate charge characteristics for switching speed compatibility.