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IRFC5210B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 100V 40A DIE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFC5210B
- Description：MOSFET 100V 40A DIE
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Single FETs, MOSFETs datasheet and documents for IRFC5210B
Single FETs, MOSFETs Overview
The IRFC5210B is a P-channel power MOSFET from Infineon Technologies, utilizing Fifth Generation HEXFET technology. It features a drain-source voltage of -100 V and a continuous drain current of 40 A at 25°C. The device offers a maximum on-resistance of 60 mOhm. It is designed for surface mount installation in TO-220 packages.
Single FETs, MOSFETs Feature Summary
- Advanced processing techniques achieve extremely low on-resistance per silicon area
- Provides high reliability for power switching applications
- Supports efficient thermal management through robust package design
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- Industrial motor control circuits
- High-side load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix (e.g., PbF) against the manufacturer's official datasheet to confirm lead-free compliance and exact pinout configuration. Ensure the selected variant matches the required thermal resistance and package tolerance for the target PCB layout. Cross-reference the part number with the latest production status to avoid obsolete components.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel switch with 100 V blocking capability and 40 A current handling is required. Consider the 60 mOhm on-resistance for conduction loss calculations. Evaluate the TO-220 package suitability for the available mounting space and thermal dissipation requirements compared to alternative surface-mount options.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's Fifth Generation HEXFET Power MOSFET family. These transistors are engineered for high-efficiency power conversion and switching. The series emphasizes reduced internal resistance to improve overall system efficiency and reduce heat generation in demanding electronic environments.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IRF5210 and IRFC5210PbF. Verify electrical parameters such as VDS, RDS(on), and package dimensions before substitution to ensure circuit compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
