IRFH4255DTRPBF

Description：MOSFET 2N-CH 25V 64A/105A PQFN
Series：HEXFET®

SKU:91b0a49668f8 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRFH4255DTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 25V 64A/105A PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRFH4255DTRPBF

Description：MOSFET 2N-CH 25V 64A/105A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：64A, 105A
Rds On (Max) @ Id, Vgs：3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs：15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1314pF @ 13V
Power - Max：31W, 38W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PQFN (5x6)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRFH4255DTRPBF

IRFH4255DTRPBF

FET, MOSFET Arrays Overview

The IRFH4255DTRPBF is a dual N-channel HEXFET power MOSFET in a Dual PQFN 5mm x 6mm package. It integrates a control FET (Q1) and a synchronous FET (Q2). Q1 features a maximum RDS(on) of 4.60 mΩ at VGS=4.5V, while Q2 achieves 2.10 mΩ under the same conditions. Both devices support a BVDSS of 25V and continuous drain currents up to 30A at TC=25°C. The component includes an intrinsic Schottky diode on Q2 with low forward voltage, reducing switching losses.

FET, MOSFET Arrays Feature Summary

Integrates control and synchronous MOSFETs within a single package for increased power density
Features low gate charge control MOSFET to reduce switching losses
Includes an intrinsic Schottky diode with low forward voltage on the synchronous channel

FET, MOSFET Arrays Applications

Control and synchronous MOSFETs for synchronous buck converters

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm packaging specifications. Confirm that the component meets industrial qualification standards per JEDEC guidelines. Ensure compliance with RoHS and halogen-free requirements during procurement. Validate moisture sensitivity level MSL1 status before storage and assembly planning.

FET, MOSFET Arrays Selection Notes

Select this component when high power density is required in a compact footprint. The integrated design simplifies layout for synchronous buck applications. Evaluate thermal performance based on junction-to-case resistance values. Consider the specific gate charge characteristics for optimizing driver circuit efficiency.

FET, MOSFET Arrays Part Context

This device belongs to the FastIRFET series by Infineon Technologies. It utilizes silicon technology for robust power switching. The Dual PQFN package provides efficient thermal dissipation through bottom and top junction paths. It represents a consolidation of discrete control and sync FETs into one reliable unit.