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IRFH5110TR2PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 5X6 PQFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFH5110TR2PBF
- Description：MOSFET N-CH 100V 5X6 PQFN
- Series：-
- Mfr：Infineon Technologies
- Package：Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：12.4mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id：4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：3152 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PQFN (5x6)
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for IRFH5110TR2PBF
Single FETs, MOSFETs Overview
The IRFH5110TR2PBF is a single N-channel Power MOSFET from Infineon's StrongIRFET family, housed in a PQFN 5x6 (SuperSO8) surface-mount package. It features a drain-source voltage rating of 100V and a maximum continuous drain current of 63A at 25°C. The device exhibits a typical gate charge of 54nC and a maximum on-resistance of 12.4mΩ at 10V gate drive. Thermal performance includes a junction-to-case thermal resistance of 1.1K/W, supporting a maximum power dissipation of 114W. The component operates within a temperature range of -55°C to 150°C and complies with RoHS standards.
Single FETs, MOSFETs Feature Summary
- StrongIRFET technology providing optimized low on-resistance for high-efficiency switching applications
- Advanced surface-mount packaging designed for enhanced thermal dissipation capabilities
- Logic-level compatible gate threshold voltage facilitating direct microcontroller interface
Single FETs, MOSFETs Applications
- Synchronous rectification in DC-DC converters
- High-frequency power switching circuits
- Motor control systems requiring robust N-channel switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix TR2PBF against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the requested part matches the exact electrical parameters and package dimensions defined in the datasheet. Confirm RoHS compliance status and check for any recent lifecycle notifications regarding availability or obsolescence before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a compact footprint is required alongside high current handling capabilities. The 100V rating suits intermediate voltage bus applications. Evaluate the thermal resistance and package size against the system's heat dissipation requirements. Consider the gate charge characteristics for driving circuit complexity and switching speed optimization in the target design.
Single FETs, MOSFETs Part Context
This device belongs to the StrongIRFET series, representing Infineon's advanced planar MOSFET technology. The SuperSO8 package integrates dual exposed drains for superior thermal performance compared to standard SO-8 packages. This series targets applications demanding high power density and efficient thermal management in small form factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical voltage, current, and thermal ratings. Verify pin compatibility and package dimensions to avoid PCB redesign requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
