ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRFHS9351TR2PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 2.3A PQFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRFHS9351TR2PBF
- Description：MOSFET 2P-CH 30V 2.3A PQFN
- Series：-
- Mfr：Infineon Technologies
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.3A
- Rds On (Max) @ Id, Vgs：170mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：3.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：160pF @ 25V
- Power - Max：1.4W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：6-PowerVDFN
- Supplier Device Package：6-PQFN Dual (2x2)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRFHS9351TR2PBF
FET, MOSFET Arrays Overview
The IRFHS9351TR2PBF is a P-Channel HEXFET Power MOSFET in a PQFN 2mm x 2mm package. It features a drain-to-source voltage of -30 V and a maximum on-resistance of 170 mΩ at VGS = -10V. The continuous drain current reaches -3.4 A at TC = 25°C. Operating junction temperature ranges from -55 to +150 °C, with power dissipation up to 1.4 W at TA = 25°C.
FET, MOSFET Arrays Feature Summary
- Low thermal resistance to PCB for efficient heat dissipation
- Low profile design enabling increased power density
- Compatible with standard surface mount manufacturing techniques
FET, MOSFET Arrays Applications
- Charge and discharge switching for battery applications
- System load switching
FET, MOSFET Arrays Procurement Notes
Verify the End-of-Life status associated with this specific mini-reel ordering suffix before finalizing procurement plans. Confirm that the industrial qualification level meets the environmental requirements of the target deployment. Ensure the component's physical dimensions align with the designated footprint on the printed circuit board layout.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual PQFN form factor is required for low-voltage power management. Evaluate the trade-off between the 170 mΩ on-resistance and the 2mm x 2mm package size against alternative packages offering lower thermal resistance. Consider the industrial qualification rating for environments requiring extended operational temperature stability.
FET, MOSFET Arrays Part Context
This device belongs to the HEXFET G174/G32 family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology within a lead-free, halogen-free PQFN package. The product line emphasizes high power density through minimized physical dimensions while maintaining robust electrical performance for general-purpose switching tasks.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference tools for verified substitutes. No direct public substitute part numbers are confirmed in the provided documentation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
