Single FETs, MOSFETs IRFU9010PBF product image

IRFU9010PBF

$1.41
  • Description:MOSFET P-CH 50V 5.3A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:01574e47ff09 Category: Brand:

  
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IRFU9010PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 50V 5.3A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU9010PBF

  • Description:MOSFET P-CH 50V 5.3A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:500mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.1 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251AA
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU9010PBF

IRFU9010PBF

Single FETs, MOSFETs Overview

The IRFU9010PBF is a Vishay Siliconix P-Channel Power MOSFET in the IPAK (TO-251AA) through-hole package. It features a -50 V drain-source voltage and a continuous drain current of -5.3 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.5 Ω at VGS = -10 V and a total gate charge of 9.1 nC. It supports a maximum power dissipation of 25 W, operates within a junction temperature range of -55 °C to +150 °C, and includes dynamic dV/dt rating and repetitive avalanche ratings.

Single FETs, MOSFETs Feature Summary

  • Straight lead configuration for through-hole mounting
  • Superior reverse energy and diode recovery dV/dt capability
  • Repetitive avalanche rating support
  • Simple drive requirements with ease of paralleling

Single FETs, MOSFETs Applications

  • Computers and peripherals
  • Telecommunication equipment
  • DC/DC converters
  • Consumer products with limited heat dissipation

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status and ensure the ordering suffix matches the required lead-free or halogen-free variant. Validate that the TO-251AA package dimensions align with your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole P-Channel MOSFET is required for low-voltage switching applications. Ensure the thermal design accommodates the 25 W maximum power dissipation at the specified case temperature. Verify that the gate drive voltage meets the -10 V requirement for optimal on-state resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/U9010 family from Vishay Siliconix, which utilizes advanced power MOSFET technology. The family includes surface-mount DPAK variants like the IRFR9010 and through-hole IPAK versions. These devices are designed for high-volume applications requiring efficient geometry and unique processing for low on-state resistance.

Single FETs, MOSFETs Replacement Considerations

IRFR9010PBF (Surface Mount DPAK equivalent)

Single FETs, MOSFETs FAQ

What is the peak diode recovery dV/dt rating?

The peak diode recovery dV/dt rating is 5.8 V/ns.

Is the IRFU9010PBF suitable for unclamped inductive switching?

Yes, the device features repetitive avalanche ratings and an EAS of 136 mJ under specific test conditions.

IRFU9010PBFIRFU9010PBF
$1.41
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