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IRFZ44NSTRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is HEXFET POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFZ44NSTRRPBF
- Description：HEXFET POWER MOSFET
- Series：HEXFET®
- Mfr：International Rectifier
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：17.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 94W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRFZ44NSTRRPBF
Single FETs, MOSFETs Overview
The IRFZ44NSTRRPBF is an N-channel enhancement mode power MOSFET from the HEXFET series, manufactured by International Rectifier. It features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 49 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 0.0175 Ω at a gate-source voltage of 10 V. It operates within a junction temperature range of -55 °C to 175 °C and supports a maximum power dissipation of 3.8 W at ambient temperature or 94 W at case temperature.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area for high efficiency.
- Features fast switching speed combined with ruggedized device design for reliable operation.
- Fully avalanche rated to withstand transient energy conditions.
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation carefully, as International Rectifier was acquired by Infineon Technologies. Confirm that the specific suffix 'RRPBF' corresponds to the requested reel packaging and lead-free compliance status in the official datasheet. Ensure the component matches the HEXFET generation specifications provided in the documentation.
Single FETs, MOSFETs Selection Notes
Select this component when a surface-mount N-channel MOSFET with 55 V rating and low on-resistance is required. The D2PAK package offers a balance between thermal performance and mounting convenience. Consider the 49 A current capability and 175 °C operating temperature for robust industrial applications.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs known for their efficiency and reliability. The IRFZ44N variant specifically targets applications requiring low conduction losses in the 55 V voltage class. The STRRPBF suffix indicates a tape-and-reel packaging format suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other HEXFET devices offering similar 55 V and 49 A ratings. Verify pinout compatibility and thermal resistance characteristics before substituting with equivalent parts from the same or alternative manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
