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Product Detailed Parameters
- Description：IGBT 600V 16A 60W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：64 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 9A
- Power - Max：60 W
- Switching Energy：250µJ (on), 640µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：43ns/240ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20FD-S is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 16 A at 25°C. The device utilizes TO-263AB surface-mount packaging with a maximum power dissipation of 60 W. It operates within a temperature range of -55°C to +150°C junction temperature. Key electrical parameters include a saturation voltage of 2 V at 15 V gate drive and 9 A collector current, and a reverse recovery time of 37 ns.
Feature Summary
- Integrates an ultrafast soft recovery diode for improved switching performance
- Designed for high-efficiency power conversion applications
- Utilizes standard TO-263 surface-mount package for thermal management
Applications
- High-frequency inverter circuits
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify component authenticity through authorized distribution channels due to the component's obsolete status. Confirm that the specific suffix denotes the integrated ultrafast soft recovery diode variant rather than the standard discrete version. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering to prevent package damage during reflow processes.
Selection Notes
Select this component when a 600 V IGBT with integrated fast-recovery diode is required in a TO-263 package. Compare against the IRG4BC20FD if surface-mount capability is not needed, noting the current difference. Evaluate thermal resistance requirements for the TO-263 footprint against the 60 W dissipation limit. Consider the obsolete status when planning long-term production runs.
Part Context
This part belongs to the Infineon IRG4BC20 series of single IGBTs. The series includes variants such as the IRG4BC20FD and IRG4BC20S. The IRG4BC20FD-S specifically distinguishes itself by incorporating an ultrafast soft recovery diode, differentiating it from standard versions. The series targets medium-power industrial applications requiring efficient switching characteristics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The component status is listed as obsolete or end-of-life. Designers should consult official replacement guides or contact the manufacturer directly for valid cross-reference data.
