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The IRG4BC20SPbF is a standard IGBT designed for minimum switching voltage and low operating frequency applications. It features an industry-standard TO-220AB package with lead-free plating. The device provides high efficiency through optimized Gate R2 IGBT design, offering reduced parameter distribution and higher efficiency than standard Gen3 IGBTs. It includes internal emitter current clamping to prevent equivalent industrial-standard Gate R3 IGBTs. Key electrical parameters include Vces of 600V, Ic of 10A, and Eon/Eoff of 1.5mJ/2.8mJ at 480V, 10A.
Verify the exact part number suffix against official Infineon documentation to confirm lead-free status and specific variant characteristics. Confirm RoHS compliance requirements match the PbF designation. Check for any obsolete status or lifecycle notices directly from the manufacturer before procurement planning.
Select this component for designs requiring robust industrial-standard performance with integrated short-circuit protection. Consider its suitability for low-frequency applications where switching losses are less critical than cost and reliability. Ensure thermal management aligns with the specified junction temperature range and power dissipation limits.
This IGBT belongs to the IRG4BC series, representing Infineon's standard generation technology. It utilizes the TO-220AB package commonly used in through-hole mounting for general-purpose power electronics. The device integrates safety features like emitter current clamping to enhance system reliability in industrial environments.
IRG4BC20FD
The maximum collector-emitter breakdown voltage (Vces) is 600V.
Yes, it features internal emitter current clamping to protect against short circuits.
At 480V and 10A, the turn-on energy (Eon) is typically 1.5mJ and turn-off energy (Eoff) is 2.8mJ.