IRG4BC20U-S

$0.82

Description：IGBT 600V 16A TO-220AB
Series：-

SKU:38ad4c8880ba Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 16A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：16 A
Current - Collector Pulsed (Icm)：52 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 9A
Power - Max：60 W
Switching Energy：100µJ (on), 120µJ (off)
Input Type：Standard
Gate Charge：27 nC
Td (on/off) @ 25°C：21ns/86ns
Test Condition：480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG4BC20U-S

Overview

The IRG4BC20U-S is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-220AB package with through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C. Power dissipation is rated at 60 W, with a junction temperature range from -55°C to +150°C. The saturation voltage is specified at 1.95 V, and the gate-emitter voltage limits are ±20 V.

Feature Summary

Single IGBT configuration for discrete switching applications
Through-hole TO-220AB package design
Silicon technology construction

Applications

Industrial motor drives
Power supply inverters
Switching mode power supplies

Procurement Notes

Verify component authenticity against official Infineon documentation due to potential availability variations. Confirm that the specific suffix matches the required electrical characteristics. Check for end-of-life status or obsolescence notifications prior to finalizing procurement decisions to ensure long-term supply chain stability.

Selection Notes

Select this component for circuits requiring 600V blocking capability and moderate current handling up to 16A. Ensure thermal management solutions support the 60W dissipation rating within the operating temperature range. Verify compatibility with standard gate drive voltages limited to ±20V for reliable operation in single-switch topologies.

Part Context

This part belongs to the Infineon IGBT transistor family, categorized under single switches. It utilizes standard silicon technology and is designed for general-purpose power switching. The TO-220AB form factor facilitates easy integration into traditional PCB layouts requiring robust mechanical mounting and heat sinking capabilities.