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Product Detailed Parameters
- Description：IGBT 600V 31A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：230µJ (on), 1.18mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：21ns/200ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30F-STRR is a standard input Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 31 A. The device supports a pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Key electrical parameters include a gate charge of 51 nC, an on-state collector-emitter voltage of 1.8 V at 17 A, and switching times of 21 ns turn-on delay and 200 ns turn-off delay under specified test conditions. It is housed in a surface-mount D2PAK package.
Feature Summary
- Standard input type for straightforward gate drive integration
- Surface mount D2PAK packaging for automated assembly
- High pulse current capability supporting transient loads
Applications
- Motor control drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix STRR to confirm tape-and-reel packaging configuration. Ensure the component matches the original design specifications regarding thermal resistance and pinout compatibility. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or recommended operating conditions before finalizing procurement orders.
Selection Notes
Select this IGBT for applications requiring a balance between low conduction losses and manageable switching speeds at 600 V. Consider the 1.8 V saturation voltage for efficiency calculations at nominal currents. Evaluate the thermal management requirements based on the 100 W power dissipation limit and the thermal characteristics of the D2PAK package for the intended duty cycle.
Part Context
This component belongs to Infineon's discrete IGBT portfolio, designed for general-purpose power switching. It utilizes planar trench technology to optimize the trade-off between on-state voltage drop and switching energy. The part is distinct from high-speed variants or modules, serving as a robust solution for medium-frequency power conversion tasks.
Replacement Considerations
Consult official substitution guides for equivalent parts with matching voltage, current, and package dimensions. Verify that alternative components meet the same switching energy and gate charge specifications to ensure circuit stability without redesign.
