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The IRG4BC30FDSTRRP is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 31 A. The device supports a peak collector pulse current of 120 A and has a maximum power dissipation of 100 W. Key electrical parameters include a saturation voltage of 1.8 V at 15 V gate drive and 17 A collector current, with a total gate charge of 51 nC. Switching times are specified as 21 ns turn-on and 200 ns turn-off under test conditions of 480 V, 17 A, and 23 Ohm source resistance. The component utilizes a D2PAK surface-mount package.
Verify the specific suffix STRR indicates tape and reel packaging when sourcing components. Confirm that the part number corresponds to the obsolete lifecycle status documented by distributors. Ensure compatibility with TO-263-3 footprint requirements on the target printed circuit board. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 31 A. Evaluate thermal management needs based on the 100 W power dissipation limit in the D2PAK package. Consider the 1.8 V saturation voltage for conduction loss calculations. Assess switching speed requirements against the provided turn-on and turn-off time specifications.
This IGBT belongs to the BC series from Infineon Technologies, designed for general-purpose power switching. The D2PAK package provides a balance between thermal performance and space efficiency for surface-mount designs. The component represents a standard discrete solution for medium-power electronic conversion tasks.
Public confirmed substitute part numbers are not available in the provided documentation.