IRG4BC30K-STRRP

Description：IGBT 600V 28A 100W D2PAK
Series：-

SKU:a690d12dbf0c Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 28A 100W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：28 A
Current - Collector Pulsed (Icm)：56 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
Power - Max：100 W
Switching Energy：360µJ (on), 510µJ (off)
Input Type：Standard
Gate Charge：67 nC
Td (on/off) @ 25°C：26ns/130ns
Test Condition：480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC30K-STRRP

Overview

The IRG4BC30K-STRRP is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter voltage rating of 600 V and a continuous collector current of 28 A at 25°C case temperature, reducing to 16 A at 100°C. The device has a maximum power dissipation of 100 W at 25°C and operates within a junction temperature range of -55°C to +150°C. It utilizes a D2PAK surface-mount package with an internal emitter inductance of 7.5 nH.

Feature Summary

High short-circuit withstand capability optimized for motor control applications
Combines low conduction losses with high switching speed
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations

Applications

Motor control systems
Hard switching applications operating between 8 kHz and 40 kHz
Resonant mode applications exceeding 200 kHz

Procurement Notes

Verify the specific ordering suffix STRRP against official documentation to confirm tape and reel packaging specifications. Confirm that the component matches the exact Generation 4 IGBT designation required for your circuit design. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component when high short-circuit ratings are critical for system protection. Consider its suitability for hard switching frequencies up to 40 kHz or resonant modes above 200 kHz. Evaluate the trade-off between its typical saturation voltage and switching energy losses based on your specific load current and voltage requirements.

Part Context

This part replaces the older IRGBC30K-S and IRGBC30M-S devices. It belongs to the Generation 4 IGBT family, which offers improved efficiency and tighter parameter distributions compared to earlier iterations. The device is designed to provide high power density for modern motor control applications.