IRG4BC40W-LPBF

Description：IGBT 600V 40A TO-262
Series：-

SKU:454e53b769b7 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 40A TO-262
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：160 W
Switching Energy：110µJ (on), 230µJ (off)
Input Type：Standard
Gate Charge：98 nC
Td (on/off) @ 25°C：27ns/100ns
Test Condition：480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package：TO-262
Grade：-
Qualification：-

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IRG4BC40W-LPBF

Overview

The IRG4BC40W-LPBF is a Generation 4 n-channel Insulated Gate Bipolar Transistor (IGBT) designed for switch-mode power supply and power factor correction applications. It features industry-benchmark switching losses, a 50% reduction in Eoff parameter, and low conduction losses. The device offers tight parameter distribution and exceptional reliability with lead-free construction. Key electrical ratings include a collector-emitter voltage of 600 V, continuous collector current of 20 A at 25°C, and maximum power dissipation of 100 W. Thermal resistance from junction to case is 0.75 K/W.

Feature Summary

Optimized for high efficiency in all power supply topologies including single-ended converters and boost PFC
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generations
Lead-Free construction ensures compliance with environmental standards

Applications

Switch-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Single-ended converters
Boost PFC topologies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Confirm availability as product lifecycles may change. Ensure thermal management solutions meet the specified junction-to-case thermal resistance requirements for the intended application load.

Selection Notes

Select this component for designs requiring optimized switching performance in hard-switched modes up to 150 kHz or resonant mode switching above 300 kHz. Consider the TO-262 package dimensions for PCB layout. Evaluate gate drive requirements based on the specified total gate charge values to ensure proper switching speed and minimize losses.

Part Context

This part belongs to Infineon's Generation 4 IGBT family, which focuses on improving efficiency through reduced switching and conduction losses. It serves as an upgrade path for older IGBTs in power conversion circuits, offering better performance characteristics compared to Generation 3 devices while maintaining industry-standard packaging compatibility.