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The IRG4CC40KB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-247AC surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 190 W. The component operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet revision and official discontinuation status directly with Infineon Technologies or authorized distributors before procurement. Confirm that the TO-247AC surface-mount package variant matches the required PCB footprint and thermal management specifications for the target application design.
Select this component when a 600V rated, surface-mount IGBT is required for high-frequency switching applications. Ensure the design accommodates the TO-247AC package dimensions and thermal requirements. Verify that the 40A continuous current rating and 1.8V saturation voltage align with the system's efficiency and load constraints.
This part belongs to the Infineon IGBT discrete transistor family. It represents a silicon-based solution designed for medium-power applications requiring reliable switching capabilities. The TO-247AC package provides a balance between thermal performance and surface-mount convenience compared to traditional through-hole variants.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon documentation for cross-reference information or equivalent series components.