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Product Detailed Parameters
- Description：IGBT CHIP
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IRG4CC80UD is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It is designed for high-frequency switching applications, operating within the 8-60 kHz range. The device features a single configuration housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 55 A at 25°C. The saturation voltage is specified at 2 V, with a power dissipation capability of 200 W. The component supports an operating temperature range from -55°C to a maximum junction temperature of 150°C.
Feature Summary
- Ultra-fast switching performance optimized for frequencies between 8 kHz and 60 kHz
- Robust thermal management capabilities with 200 W power dissipation rating
- High voltage tolerance suitable for demanding power conversion environments
Applications
- Switching mode power supplies
- Motor drive inverters
- Industrial power control systems
Procurement Notes
Verify the specific suffix and revision level against the official Infineon datasheet to ensure compatibility with design requirements. Confirm that the TO-247-3 package dimensions match the target PCB footprint. Check for any recent product lifecycle notifications or discontinuation notices directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when designing circuits requiring fast switching speeds within the 600 V class. Ensure the thermal design can handle the 200 W dissipation limit under worst-case conditions. Verify that the gate drive circuitry aligns with the specified voltage limits and switching characteristics for optimal efficiency.
Part Context
This IGBT belongs to Infineon's UltraFast series, engineered for high-efficiency power electronics. It complements other devices in the portfolio by offering a balance of low conduction losses and rapid switching transitions. The technology is widely utilized in modern industrial and consumer power applications requiring reliable semiconductor switching solutions.
Replacement Considerations
Consult the official Infineon replacement guide for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before integrating alternative part numbers into existing designs.
