IRG4IBC30W

$1.86

Description：IGBT 600V 17A TO220-FP
Series：-

SKU:52426924f9d3 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 17A TO220-FP
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：17 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 12A
Power - Max：45 W
Switching Energy：130µJ (on), 130µJ (off)
Input Type：Standard
Gate Charge：51 nC
Td (on/off) @ 25°C：25ns/99ns
Test Condition：480V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：PG-TO220-FP
Grade：-
Qualification：-

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IRG4IBC30W

Overview

The IRG4IBC30W is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 17 A. The device is housed in a TO-220FP package, suitable for through-hole mounting. Power dissipation is rated at 45 W. The operational temperature range spans from -55°C to +150°C.

Feature Summary

Single IGBT configuration utilizing silicon technology
Designed for high-voltage power switching applications
Robust thermal performance within specified operating limits

Applications

Power supply units
Motor control systems
Industrial inverters

Procurement Notes

Verify component authenticity and datasheet revisions before integration. Confirm that the TO-220FP package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the 45 W dissipation rating. Check for end-of-life status implications on long-term production viability.

Selection Notes

Select this component for circuits requiring 600 V blocking capability with moderate current handling. Compare against alternatives if higher current density or lower saturation voltage is required. Validate gate drive requirements against standard IGBT specifications. Consider thermal resistance characteristics for the specific enclosure design.

Part Context

This discrete IGBT belongs to Infineon's broader portfolio of power semiconductor devices. It serves as a fundamental switching element in medium-power electronic converters. The part represents legacy silicon technology compared to modern wide-bandgap alternatives.