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Product Detailed Parameters
- Description：IGBT 600V 55A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：55 A
- Current - Collector Pulsed (Icm)：220 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 27A
- Power - Max：200 W
- Switching Energy：990µJ (on), 590µJ (off)
- Input Type：Standard
- Gate Charge：180 nC
- Td (on/off) @ 25°C：46ns/140ns
- Test Condition：480V, 27A, 5Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC50UD-EPBF is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600 V collector-emax voltage rating and a continuous collector current of 55 A at 25°C. The device utilizes a TO-247-3 through-hole package with a maximum power dissipation of 200 W. Key electrical parameters include a collector-emitter saturation voltage of 2 V and a gate-emax voltage range of -20 V to +20 V. Designed for ultrafast switching applications operating between 8 kHz and 60 kHz, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Ultrafast switching capability optimized for high-frequency operation up to 60 kHz
- Enhanced product qualification (EP) status ensuring robust reliability standards
- Low saturation voltage for efficient conduction in power conversion circuits
Applications
- High-frequency inverters
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify component authenticity through authorized channels due to the discontinued lifecycle status. Confirm RoHS compliance documentation matches specific manufacturing dates. Validate that the EP suffix indicates the required enhanced product qualification level for your application's reliability standards before finalizing procurement plans.
Selection Notes
Select this IGBT when designing circuits requiring ultrafast switching speeds within the 8-60 kHz range. Ensure thermal management solutions support the 200 W power dissipation rating in the TO-247-3 package. Verify that the 600 V voltage rating provides adequate headroom for your system's DC bus voltage and transient conditions.
Part Context
This component belongs to Infineon's IGBT transistor portfolio, specifically designed for power electronics applications. It represents an enhanced product variant within the UltraFast series, offering improved reliability metrics compared to standard commercial grades while maintaining compatibility with common TO-247 mounting infrastructure.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon replacement guides or contact technical support directly for validated cross-reference information regarding this discontinued item.
