IRG4PC50WPBF

Overview

The IRG4PC50WPbF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Infineon's TRENCHSTOP™ technology. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 52 A at 25 °C. The device exhibits a maximum saturated collector-emitter voltage of 2.23 V and a typical gate threshold voltage range of 3.0 V to 4.8 V. Total switching losses are specified as 0.86 mJ for turn-on and 0.52 mJ for turn-off under standard test conditions. Thermal resistance from junction to case is 0.62 K/W, with a maximum power dissipation rating of 200 W.

Feature Summary

• Incorporates TRENCHSTOP™ technology to achieve low switching losses and high efficiency across various power topologies.
• Features a robust design capable of withstanding short-circuit conditions up to 10 microseconds.
• Provides excellent thermal performance through optimized internal structure and low thermal resistance.
• Offers high blocking stability and reliable operation in motor drive and power factor correction applications.

Applications

• Motor Drive Systems
• Power Factor Correction (PFC)
• High Frequency Inverters

Procurement Notes

Verify the component authenticity by checking the marking code against official Infineon documentation. Confirm that the TO-247A package dimensions match the JEDEC outline specifications. Ensure the ordering suffix corresponds to lead-free requirements if applicable to your assembly process. Cross-reference the datasheet revision date to ensure compatibility with your design parameters.

Selection Notes

Select this IGBT for designs requiring high switching frequencies up to 20 kHz. Evaluate the thermal management strategy based on the specified junction-to-case thermal resistance. Consider the gate charge characteristics when designing the driver circuitry to optimize switching speed and minimize losses. Verify that the operating voltage and current limits remain within the safe operating area defined in the datasheet.

Part Context

This component belongs to the IRG4 series of discrete IGBTs manufactured by Infineon Technologies. It is designed for medium-power applications where efficiency and switching speed are critical. The TRENCHSTOP™ generation represents an advancement in silicon technology, offering improved performance over previous generations while maintaining compatibility with standard mounting configurations.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Ensure any replacement part matches the 600 V voltage rating, 52 A current capacity, and TO-247A package type. Verify that the new component's switching losses and thermal characteristics meet or exceed the original specifications.

FAQ

What is the maximum short-circuit time for the IRG4PC50WPbF?

The device is rated for a maximum short-circuit time of 10 microseconds.

Does the IRG4PC50WPbF include an integrated diode?

No, this is a standalone IGBT without an integrated anti-parallel diode.

What is the typical gate threshold voltage range?

The typical gate threshold voltage ranges from 3.0 V to 4.8 V.