IRG4PH30KPBF

IRG4PH30KPBF

  • Description:IGBT 1200V 20A TO-247AC
  • Series:-

SKU:7c121b4bfa70 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 20A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):20 A
  • Current - Collector Pulsed (Icm):40 A
  • Vce(on) (Max) @ Vge, Ic:4.2V @ 15V, 10A
  • Power - Max:100 W
  • Switching Energy:640µJ (on), 920µJ (off)
  • Input Type:Standard
  • Gate Charge:53 nC
  • Td (on/off) @ 25°C:28ns/200ns
  • Test Condition:960V, 10A, 23Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG4PH30KPBF

Overview

The IRG4PH30KPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-247-3 through-hole package and supports a collector-emitter maximum voltage of 1.2 kV. The device handles a continuous collector current of 20 A at 25°C, with a power dissipation rating of 180 W. Operating temperatures range from -55°C to +150°C junction temperature.

Feature Summary

  • Ultrafast switching characteristics optimized for frequencies between 4 kHz and 20 kHz
  • High voltage blocking capability suitable for demanding power conversion environments
  • Robust thermal management design within the TO-247-3 through-hole package

Applications

  • Industrial motor drives
  • Switch-mode power supplies
  • Inverter circuits

Procurement Notes

This component is officially listed as obsolete or end-of-life by the manufacturer. Verify availability through authorized distributors or secondary market channels. Confirm that replacement parts meet identical electrical specifications and pinout compatibility before integration into existing designs.

Selection Notes

Select this IGBT for applications requiring ultrafast switching speeds in the 4-20 kHz range. Ensure the thermal design accommodates the 180 W dissipation limit. Verify gate drive requirements align with standard IGBT control voltages. Consider the through-hole mounting style for mechanical stability in high-vibration environments.

Part Context

The IRG4PH30KPBF belongs to Infineon's PH series of ultrafast IGBTs. This series is engineered for high-frequency operation, distinguishing it from standard speed variants. The component utilizes silicon technology and is housed in a robust TO-247AC package, providing a balance of electrical performance and thermal reliability for discrete power switching tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation due to the obsolete status. Evaluate equivalent ultrafast IGBTs from other manufacturers with matching 1200V ratings and TO-247 packages if direct sourcing is impossible.

IRG4PH30KPBFIRG4PH30KPBF

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