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The IRG4PH30KPBF is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-247-3 through-hole package and supports a collector-emitter maximum voltage of 1.2 kV. The device handles a continuous collector current of 20 A at 25°C, with a power dissipation rating of 180 W. Operating temperatures range from -55°C to +150°C junction temperature.
This component is officially listed as obsolete or end-of-life by the manufacturer. Verify availability through authorized distributors or secondary market channels. Confirm that replacement parts meet identical electrical specifications and pinout compatibility before integration into existing designs.
Select this IGBT for applications requiring ultrafast switching speeds in the 4-20 kHz range. Ensure the thermal design accommodates the 180 W dissipation limit. Verify gate drive requirements align with standard IGBT control voltages. Consider the through-hole mounting style for mechanical stability in high-vibration environments.
The IRG4PH30KPBF belongs to Infineon's PH series of ultrafast IGBTs. This series is engineered for high-frequency operation, distinguishing it from standard speed variants. The component utilizes silicon technology and is housed in a robust TO-247AC package, providing a balance of electrical performance and thermal reliability for discrete power switching tasks.
Public confirmed substitute part numbers are not available in the provided documentation due to the obsolete status. Evaluate equivalent ultrafast IGBTs from other manufacturers with matching 1200V ratings and TO-247 packages if direct sourcing is impossible.