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Product Detailed Parameters
- Description：IGBT 1200V 57A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：57 A
- Current - Collector Pulsed (Icm)：114 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 33A
- Power - Max：200 W
- Switching Energy：1.8mJ (on), 19.6mJ (off)
- Input Type：Standard
- Gate Charge：167 nC
- Td (on/off) @ 25°C：32ns/845ns
- Test Condition：960V, 33A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG4PH50S-EPBF is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a planar design with an integrated ultrafast soft recovery anti-parallel diode, housed in a TO-247AC package. The device is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 57 A at 25°C. Key electrical parameters include a saturation voltage of 1.47 V at 33 A, a gate charge of 151 nC, and a turn-off energy of 15 mJ under soft switching conditions. It supports a maximum power dissipation of 200 W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Fourth-generation IGBT technology providing tight parameter distribution and high efficiency.
- Integrated ultrafast soft recovery diode optimized for low switching losses.
- Designed for low saturation voltage and operation at frequencies below 1 kHz.
Applications
- PTC heater control circuits
- DC-DC converters
- Motor drives
Procurement Notes
Verify the exact suffix configuration against official Infineon documentation, as variations such as EPBF indicate specific lead-free and halogen-free compliance. Confirm availability status, as this component may be subject to end-of-life notices or obsolescence. Ensure that the TO-247AC pinout matches the target PCB layout requirements before procurement.
Selection Notes
Select this component for applications requiring robust performance at low switching frequencies, specifically those operating below 1 kHz. The low saturation voltage makes it suitable for efficient power conversion where conduction losses are critical. Verify thermal management capabilities to ensure the junction temperature remains within the specified limits during operation.
Part Context
This part belongs to Infineon's IRG4PH series of discrete IGBTs, which are engineered for industrial and automotive applications. The series utilizes planar technology to deliver reliable performance in power electronics. The TO-247AC package provides a standardized form factor for through-hole mounting, facilitating integration into various power modules and discrete circuit designs.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material. Consult official Infineon cross-reference tools for potential alternatives.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 1200 V.
Is the integrated diode fast-recovering?
Yes, the device includes an integrated ultrafast soft recovery anti-parallel diode.
What is the recommended operating frequency range?
The device is optimized for low operating frequencies, specifically below 1 kHz.
