IRG4PH50UPBF

Description：IGBT 1200V 45A TO-247AC
Series：-

SKU:b6c16f856658 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 45A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：45 A
Current - Collector Pulsed (Icm)：180 A
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 24A
Power - Max：200 W
Switching Energy：530µJ (on), 1.41mJ (off)
Input Type：Standard
Gate Charge：160 nC
Td (on/off) @ 25°C：35ns/200ns
Test Condition：960V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH50UPBF

Overview

The IRG4PH50UPbF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a TO-247AC package. It features a collector-to-emitter breakdown voltage of 1200 V and supports a continuous collector current of 45 A at 25°C case temperature. The device is optimized for high-frequency operation up to 40 kHz in hard switching applications. Key electrical parameters include a typical saturation voltage of 2.78 V at 24 A and a maximum power dissipation of 200 W.

Feature Summary

UltraFast design optimized for high operating frequencies up to 40 kHz in hard switching and over 200 kHz in resonant mode
New IGBT architecture providing tighter parameter distribution and higher efficiency compared to previous generations
Industry standard TO-247AC package configuration with lead-free construction

Applications

Power conversion systems
Switching Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
Welding equipment

Procurement Notes

Verify the component authenticity by checking the marking code on the package against the datasheet specifications. Confirm that the part number suffix matches the lead-free requirement. Ensure the supplier provides traceability documentation consistent with Infineon manufacturing standards before finalizing any acquisition.

Selection Notes

Select this component when designing circuits requiring high-voltage handling and fast switching speeds. Evaluate thermal management requirements based on the junction-to-case thermal resistance. Consider the gate charge characteristics for driver selection to ensure optimal switching performance within the specified frequency range.

Part Context

This discrete IGBT belongs to the UltraFast series designed for medium-power applications. It utilizes silicon technology to deliver robust performance in demanding environments. The TO-247AC form factor facilitates efficient heat dissipation through direct mounting to a heatsink using standard mechanical fasteners.