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The IRG7PH35U-EP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and high efficiency. The device features a maximum junction temperature of 175 °C, a square Reverse Bias Safe Operating Area (RBSOA), and a positive VCE(on) temperature coefficient. It is packaged in a TO-247AD form factor with three pins.
Verify the specific suffix 'UD' versus 'U' when sourcing, as the datasheet indicates the UD variant includes an integrated ultrafast soft recovery diode while the U variant may not. Confirm lead-free status and RoHS compliance against the manufacturer's latest documentation. Ensure the TO-247AD package dimensions match your thermal management requirements.
Select this component for applications requiring high efficiency across a wide operating range due to its low on-state voltage and switching losses. The positive temperature coefficient is critical for designs involving parallel operation to ensure stable current sharing. Verify that the 175 °C maximum junction temperature aligns with your system's thermal design margins.
This part belongs to the IRG7PH35 series from International Rectifier, now part of Infineon Technologies. The EP suffix typically denotes an enhanced or specific production version within the lineup. It is designed as a robust power switch for medium-power conversion applications where reliability and thermal performance are paramount.
Public confirmed substitute part numbers are not available in the provided source material.