ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH 1200V 85A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：313 W
- Switching Energy：1.21mJ (off)
- Input Type：Standard
- Gate Charge：270 nC
- Td (on/off) @ 25°C：-/270ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IRG7PH42UD1MPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 85 A at 25°C. The device utilizes TRENCHSTOP™ technology to optimize switching performance and conduction losses. It is housed in a TO-247AC package designed for through-hole mounting, supporting a maximum power dissipation of 320 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrated ultra-low forward voltage diode optimized for soft switching applications
- TRENCHSTOP™ technology for reduced switching losses and improved efficiency
- Robust thermal management capabilities via TO-247AC leaded package
Applications
- Induction heating systems
- Soft switching power converters
- High-frequency inverter circuits
Procurement Notes
Verify the specific suffix MPBF against official datasheets to confirm tape-and-reel packaging status versus tube variants. Ensure the procurement channel provides traceable documentation matching the manufacturer's part identification. Cross-reference the component with the latest revision history to confirm material content and compliance certifications align with project requirements before finalizing orders.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability combined with low conduction losses in soft-switching topologies. The integrated diode characteristic simplifies circuit design for resonant converters. Evaluate thermal resistance parameters relative to the heatsinking strategy to ensure operation remains within the specified junction temperature limits under peak load conditions.
Part Context
This IGBT belongs to the IRG7PH series, which is engineered specifically for induction heating and soft switching applications. The series leverages advanced trench gate technology to achieve superior performance compared to standard field-stop devices. It represents a discrete power solution within Infineon's broader portfolio of high-voltage semiconductor components for industrial power electronics.
Replacement Considerations
Consult official cross-reference guides for direct substitutes such as the IRG7PH42UDPBF or IRG7PH42UD1PBF. Verify that any alternative maintains identical pinout configuration, voltage ratings, and thermal characteristics to ensure compatibility without redesigning the printed circuit board layout.
