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The IRG7PH42UDPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum continuous collector current of 85 A and a maximum collector-emitter voltage rating of 1200 V. The device is housed in a TO-247AC package with three terminals for through-hole mounting. Key electrical specifications include a maximum gate-emitter voltage of ±30 V, a maximum power dissipation of 320 W, and an operating temperature range from -55 °C to +150 °C. The physical dimensions are approximately 15.87 mm in width, 5.31 mm in height, and 20.7 mm in length.
Verify the specific ordering suffix against official Infineon documentation to ensure correct variant selection. Confirm that the component matches the required TO-247AC package style and terminal configuration. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when designing circuits requiring high voltage isolation and significant current handling capabilities. Ensure the thermal management solution supports the specified 320 W power dissipation limit. Verify that the drive circuitry can accommodate the ±30 V gate-emitter voltage constraints for reliable switching operations.
This IGBT belongs to Infineon's discrete power semiconductor portfolio, designed for medium to high-power industrial applications. It utilizes advanced trench technology to optimize switching losses and conduction characteristics. The TO-247AC package provides a standardized form factor widely used in commercial and industrial power electronics assemblies.
Consult official Infineon substitution guides for verified equivalents. Ensure any replacement maintains identical voltage ratings, current capacities, and package dimensions to fit existing board layouts without modification.