IRG7PH46U-EP

$4.81

Description：IGBT TRENCH 1200V 130A TO-247AD
Series：-

SKU:107ff516bbab Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 130A TO-247AD
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：130 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
Power - Max：469 W
Switching Energy：2.56mJ (on), 1.78mJ (off)
Input Type：Standard
Gate Charge：220 nC
Td (on/off) @ 25°C：45ns/410ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IRG7PH46U-EP

Overview

The IRG7PH46U-EP is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 90 A at 25 °C. The device utilizes trench IGBT technology to achieve low saturation voltage and switching losses, supporting a maximum junction temperature of 175 °C. It is housed in a TO-247AD package with three pins for through-hole mounting.

Feature Summary

Employs low VCE(on) trench IGBT technology for high efficiency
Features ultrafast soft recovery diode for reduced switching losses
Demonstrates positive VCE(on) temperature coefficient for safe parallel operation

Applications

Uninterruptible Power Supplies (UPS)
Solar Inverters
Induction Heating Systems
Welding Equipment

Procurement Notes

Verify the manufacturer designation carefully, as International Rectifier was acquired by Infineon Technologies. Ensure the component datasheet explicitly references International Rectifier specifications rather than generic family data. Confirm that the specific suffix matches the requested electrical characteristics and packaging type before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high voltage blocking capability combined with high current handling. The integrated ultrafast diode makes it suitable for hard-switching topologies where reverse recovery performance is critical. Evaluate thermal management requirements based on the specified power dissipation limits within the TO-247AD package constraints.

Part Context

This part belongs to the IRG7PH series of high-performance IGBTs designed for industrial power conversion. The 'EP' suffix typically denotes an enhanced or specific variant configuration within the product line. These devices are engineered to replace older generation IGBTs in demanding power electronics applications requiring improved efficiency and ruggedness.

Replacement Considerations

Consult official cross-reference lists for direct replacements such as the IRG7PH35UD-EP or IRG7PH42U-EP. Verify pinout compatibility and ensure that the replacement device meets or exceeds the required voltage and current ratings for the specific circuit design.