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The IRG7T200CL12B is a low-side chopper IGBT module with an integrated high-side diode, housed in the POWIR 62 package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 200 A at TC = 80°C. The saturation voltage is 1.90 V at IC = 200 A and TJ = 25°C. Switching losses include Eon of 24.6 mJ and Eoff of 12.7 mJ at TJ = 25°C. The module supports a short-circuit safe operating area (SCSOA) of 10 μs and offers an isolation voltage of 2500 V.
Verify component authenticity through authorized Infineon distributors or certified suppliers. Confirm RoHS compliance status and check for specific manufacturing lot codes to ensure traceability. Review the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.
Select this module for applications requiring robust high-current handling and short-circuit protection. Ensure adequate heatsinking to maintain junction temperatures within the specified range. Verify gate drive requirements align with the internal gate resistance and total gate charge parameters for optimal switching performance.
This component belongs to the POWIR series of insulated gate bipolar transistor modules from Infineon Technologies. It integrates both IGBT and freewheeling diode functions into a single unit, designed for industrial power conversion systems. The POWIR 62 package provides a standardized footprint for mounting and thermal management.
Consult official replacement guides for compatible modules with similar voltage and current ratings. Verify pinout compatibility and thermal resistance values when substituting with other POWIR series components.