IRGB4045DPBF

Description：IGBT TRENCH 600V 12A TO-220AB
Series：-

SKU:789500a15b1e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 12A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：12:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 6A
Power - Max：77 W
Switching Energy：56µJ (on), 122µJ (off)
Input Type：Standard
Gate Charge：13 nC
Td (on/off) @ 25°C：27ns/75ns
Test Condition：400V, 6A, 47Ohm, 15V
Reverse Recovery Time (trr)：74 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRGB4045DPBF

Overview

The IRGB4045DPbF is a 600 V, 24 A N-channel IGBT in a TO-220AB package. It integrates an ultrafast soft recovery diode with a maximum continuous collector current of 24 A and a pulsed current of 48 A. The device features low saturation voltage (VCE(on)) and switching losses, supporting a maximum junction temperature of 175 °C. Electrical characteristics include a gate threshold voltage of 4.0 to 6.5 V, total gate charge of 13 to 19.5 nC, and turn-off energy loss up to 143 µJ at 25 °C.

Feature Summary

Utilizes low VCE(on) Trench IGBT technology for high efficiency across wide application ranges.
Integrates an ultrafast soft recovery co-packaged diode to minimize electromagnetic interference.
Features a positive VCE(on) temperature coefficient to ensure excellent current sharing during parallel operation.

Applications

High-efficiency motor drives
Switch-mode power supplies
Industrial inverters

Procurement Notes

Verify the component matches the exact datasheet specifications provided by Infineon Technologies. Confirm that the package type is TO-220AB and the suffix indicates lead-free construction. Ensure the sourcing channel provides original manufacturer documentation to validate authenticity and compliance with industrial market qualification standards.

Selection Notes

Select this component for designs requiring rugged transient performance and square reverse bias safe operating area. Consider its suitability for applications demanding low switching losses and high reliability under varying thermal conditions. Evaluate the integrated diode's soft recovery characteristics against system EMI requirements.

Part Context

This part belongs to the IRGB40xx series of insulated gate bipolar transistors manufactured by Infineon Technologies. It represents a specific configuration within their industrial-grade power semiconductor portfolio, designed to balance conduction and switching performance for robust power conversion systems.

Replacement Considerations

Consult official replacement lists from Infineon Technologies for verified substitutes. Cross-reference electrical parameters such as breakdown voltage, current ratings, and thermal resistance before implementing any alternative components.