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Product Detailed Parameters
- Description：IGBT 600V 31A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGBC30FD2 is a co-packaged Insulated Gate Bipolar Transistor (IGBT) with an ultrafast soft recovery diode in a TO-220AB package. It features a collector-to-emitter voltage of 600V and continuous collector current ratings of 31A at 25°C case temperature and 17A at 100°C. The device includes HEXFRED™ diodes optimized for medium operating frequencies between 1kHz and 10kHz. Key electrical parameters include a maximum VCE(sat) of 2.1V at 31A, total switching loss up to 4.6mJ, and a peak pulsed collector current of 120A.
Feature Summary
- Co-packaged IGBT and ultrafast soft recovery diode for high-voltage applications
- HEXFRED™ technology providing optimized reverse recovery characteristics
- Optimized for medium frequency operation from 1kHz to 10kHz
- Low saturation voltage for improved efficiency
Applications
- Motor control systems
- Uninterruptible Power Supplies (UPS)
- Power supply designs
Procurement Notes
Verify the manufacturer origin as International Rectifier or its successor entity, as Infineon acquired IR. Confirm the specific datasheet revision matches the required thermal and electrical specifications. Ensure the TO-220AB package outline aligns with PCB footprint requirements. Check for RoHS compliance status if environmental regulations apply to the target assembly.
Selection Notes
Select this component for applications requiring integrated fast recovery diodes within a single TO-220AB package. Evaluate thermal resistance values against the expected heat sink configuration. Consider the 1kHz to 10kHz frequency optimization when designing switching circuits. Verify gate drive requirements match the specified threshold and charge parameters.
Part Context
This part belongs to the Fast CoPack IGBT series, which integrates power switches and diodes to simplify design. Originally developed by International Rectifier, these components are now managed under Infineon Technologies following the acquisition. The series targets compact, high-performance solutions for industrial and consumer electronics.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain compatible voltage ratings, current capabilities, and package dimensions.
