IRGC100B60KB

Description：IGBT NPT 600V 100A DIE
Series：-

SKU:95adc252f041 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 100A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC100B60KB

Overview

The IRGC100B60KB is a bare semiconductor die utilizing GEN5 Non Punch Through (NPT) technology, designed for high-power motor control applications. It features a nominal collector current of 100A and a breakdown voltage of 600V. The device exhibits a typical saturation voltage of 1.8V at 25°C and supports a short circuit capability of 10µs. Manufactured on a 150mm wafer with specific mechanical parameters including an emitter dimension of 8.509mm, it provides excellent current sharing in parallel operation.

Feature Summary

Utilizes GEN5 Non Punch Through (NPT) technology to achieve low saturation voltage and rugged transient performance.
Features a positive VCE(on) temperature coefficient to ensure excellent current sharing during parallel operation.
Provides a 10µs short circuit rating suitable for demanding industrial motor control environments.

Applications

Industrial motor control systems
High-efficiency power conversion modules
Parallel-connected power assemblies

Procurement Notes

Verify the exact configuration required, as this component is supplied as sawn wafers on film rather than packaged units. Confirm that your assembly facility meets Class 10,000 clean room standards and utilizes ESD-safe handling procedures. Ensure compatibility with specified die attach temperatures not exceeding 300ºC for optimal electrical results.

Selection Notes

Select this component when designing custom power modules requiring high current density and robust fault tolerance. The 150mm wafer format allows for integration into specialized packaging solutions. Consider the mechanical dimensions and metal composition requirements to ensure proper thermal management and bonding within the target application architecture.

Part Context

This part belongs to International Rectifier's insulated gate bipolar transistor portfolio, now under Infineon Technologies. It represents a transition from traditional packaged devices to bare die solutions, offering designers flexibility in creating optimized power stages. The product line emphasizes efficiency and reliability for heavy-duty industrial electronics.

Replacement Considerations

No direct public substitute part numbers are documented for this specific bare die configuration. Alternative selection requires evaluating other NPT technology dies with matching voltage, current, and mechanical specifications.