IRGC25B120UB

Description：IGBT NPT 1200V 25A DIE
Series：-

SKU:bbc1dce87ae8 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 25A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：25 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC25B120UB

Overview

The IRGC25B120UB is a Gen 5 discrete IGBT with a maximum collector-emitter voltage (VCEmax) of 1200 V and a continuous collector current (ICmax) of 25 A. It features a maximum saturation voltage (VCE(sat)) of 2.7 V, a gate threshold voltage range from 4.4 V to 6.0 V, a turn-on time (tr) of 20 ns, and a turn-off time (tf) of 24 ns. The component operates within a temperature range of -55 °C to 150 °C.

Feature Summary

Utilizes TRENCHSTOP™ technology for optimized switching performance
Designed for high-efficiency industrial power applications
Features robust thermal characteristics for demanding environments

Applications

Industrial motor drives
Welding equipment
Power supplies

Procurement Notes

Verify the exact part number against official Infineon documentation to ensure compatibility with your specific application requirements. Confirm that the datasheet specifications align with your design parameters before procurement.

Selection Notes

Consider the trade-off between conduction losses indicated by VCE(sat) and switching speeds defined by tr and tf when selecting this device. Ensure the operating temperature does not exceed the 150 °C limit for reliable long-term operation in your system.

Part Context

This component belongs to the Gen 5 IGBT family, which represents an evolution in Infineon's discrete power semiconductor portfolio. It is designed to offer improved efficiency and reliability compared to previous generations, targeting modern industrial power conversion needs.