IRGC49B120UB

Description：IGBT NPT 1200V 50A DIE
Series：-

SKU:fb2c62ec2de5 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC49B120UB

Overview

The IRGC49B120UB is a Gen 5 discrete IGBT from Infineon Technologies, rated for 1200 V collector-emitter voltage and 50 A continuous collector current. It features a maximum saturation voltage of 2.25 V, with turn-on and turn-off times of 39 ns and 25 ns respectively. The component operates within a temperature range of -55 °C to 150 °C.

Feature Summary

Utilizes TRENCHSTOP™ technology for optimized switching performance
Designed for high-efficiency industrial power applications
Provides robust operation across extended temperature ranges

Applications

Industrial motor drives
High-frequency power supplies
Welding equipment
Uninterruptible power systems (UPS)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and package variations. Confirm RoHS compliance status and lead-time availability directly with authorized distributors or the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring a balance between low conduction losses and fast switching speeds at 1200 V. Ensure the gate drive circuitry supports the specified threshold voltages and that thermal management solutions accommodate the device's power dissipation characteristics under expected load conditions.

Part Context

This part belongs to Infineon’s Gen 5 IGBT portfolio, which utilizes advanced trench gate and field-stop technologies. These devices are engineered to deliver superior efficiency compared to previous generations, making them suitable for demanding power conversion tasks in modern industrial electronics.