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The IRGI4064DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Trench technology and is housed in a TO-220AB Full-Pak package for through-hole mounting. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.91 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 38 W. The component operates within a temperature range of -40°C to +175°C.
Verify the specific datasheet revision and ordering suffixes directly with Infineon or authorized distributors. Confirm that the TO-220AB Full-Pak package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 38 W power dissipation limit under your specific operating conditions.
Select this component when a 600V rated, single IGBT with moderate current handling is required. The 15 A continuous current rating suits applications where lower power density is acceptable compared to higher-current modules. Consider the TO-220AB package constraints for board space and thermal resistance calculations relative to your heat sink design.
This part belongs to Infineon's portfolio of discrete IGBTs designed for general-purpose power electronics. It complements other devices in the IRG series, offering a balance between switching speed and conduction losses suitable for industrial and consumer power supplies.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference lists from Infineon for potential alternatives.