IRGIB6B60KDPBF-INF

$1.38

Description：IGBT 600V 11A TO220 FP
Series：-

SKU:c7411c2f2159 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 11A TO220 FP
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：11:00 AM
Current - Collector Pulsed (Icm)：22 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 5A
Power - Max：38 W
Switching Energy：600µJ (on), 580µJ (off)
Input Type：Standard
Gate Charge：18.2 nC
Td (on/off) @ 25°C：60ns/160ns
Test Condition：480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)：91 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO220 Full Pack
Grade：-
Qualification：-

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IRGIB6B60KDPBF-INF

Overview

The IRGIB6B60KDPBF-INF is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-220FP-3 through-hole package and supports a maximum collector-emitter voltage of 600 V. The device provides a continuous collector current of 11 A at 25°C with a power dissipation rating of 38 W. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to 20 V, and an operating temperature range from -55°C to +175°C.

Feature Summary

Single IGBT configuration for discrete switching applications
Low collector-emitter saturation voltage for reduced conduction losses
Through-hole mounting in a TO-220FP-3 package for robust thermal management

Applications

Motor drives
Power supplies
Inverters

Procurement Notes

Verify the specific suffix INF against official Infineon documentation to confirm component equivalence, as distributor listings may vary. Confirm RoHS compliance status directly with the manufacturer or authorized sources. Check for end-of-life status updates, as some records indicate discontinuation. Ensure the supplier provides valid traceability data for quality assurance purposes.

Selection Notes

Select this component for designs requiring a 600V rated single IGBT with moderate current handling capabilities. The TO-220FP-3 package is suitable for applications needing efficient heat dissipation via board mounting. Consider the 1.8 V saturation voltage when calculating conduction losses. Verify that the required switching frequency aligns with the device's soft recovery characteristics.

Part Context

This part belongs to the Infineon IGBT transistor family, specifically designed for general-purpose power switching. It utilizes silicon technology and is distinct from higher-power modules or different voltage classes within the same product line. The component serves as a fundamental building block for medium-power electronic systems.