IRGP35B60PDPBF

Description：IGBT NPT 600V 60A TO-247AC
Series：-

SKU:eb0cfe510627 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 60A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 35A
Power - Max：308 W
Switching Energy：220µJ (on), 215µJ (off)
Input Type：Standard
Gate Charge：160 nC
Td (on/off) @ 25°C：26ns/110ns
Test Condition：390V, 22A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRGP35B60PDPBF

Overview

The IRGP35B60PDPbF is a 600 V, 60 A N-channel IGBT in a TO-247AC package. It utilizes NPT technology with a positive temperature coefficient for parallel operation. The device features lower VCE(SAT) and minimal tail current. It includes an integrated HEXFRED ultrafast soft-recovery diode. Maximum ratings include ±20 V gate-to-emitter voltage and a junction temperature range of -55 to +150 °C.

Feature Summary

NPT Technology with Positive Temperature Coefficient
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Minimal Tail Current

Applications

Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies

Procurement Notes

Verify the component matches the exact part number IRGP35B60PDPbF. Confirm the manufacturer is Infineon Technologies or International Rectifier. Ensure the datasheet specifies the TO-247AC package and lead-free construction. Check that the documentation confirms the WARP2 series classification and integrated diode specifications.

Selection Notes

Select this component for high-frequency switching applications up to 150 kHz. The positive temperature coefficient facilitates safe parallel operation for higher current requirements. The integrated soft-recovery diode reduces reverse recovery losses. Consider thermal resistance values when designing heat sinks for continuous collector currents at elevated case temperatures.

Part Context

This IGBT belongs to the WARP2 series, designed for industrial markets. It combines an N-channel IGBT with a co-packaged HEXFRED diode. The device is optimized for low conduction and switching losses. It is suitable for power supplies requiring high reliability and efficient energy conversion.

Replacement Considerations

Verify pinout compatibility with the TO-247AC package. Ensure replacement devices support the required 600 V blocking voltage and 60 A current rating. Confirm the integrated diode characteristics match the original soft-recovery profile.