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The IRGP4062-EPBF is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) from the International Rectifier HEXFET family, designed for robust industrial applications. It features a 600V collector-emitter breakdown voltage and supports a continuous collector current of 76A at 100°C. The device utilizes trench gate technology to minimize conduction and switching losses, achieving a low saturation voltage of 1.95V. Packaged in a TO-247AD form factor with a thermal resistance of 0.53°C/W, it integrates an ultrafast soft recovery anti-parallel diode. Rated for operation up to +175°C junction temperature, it offers a 5µs short-circuit withstand capability.
Verify component authenticity by checking manufacturer markings and datasheet alignment. Confirm RoHS compliance status via official documentation. Ensure proper handling procedures are followed due to electrostatic sensitivity. Validate package integrity upon receipt to prevent mechanical damage.
Select this component for high-power switching applications requiring low loss and high reliability. Consider the 600V rating and 76A current capacity against load requirements. Evaluate thermal management needs based on the specified junction temperature and thermal resistance values.
This part belongs to the IRGP40xxD series of superfast IGBTs from International Rectifier, now part of Infineon Technologies. The series is characterized by optimized trench gate structures for high-frequency performance. The -EPBF suffix indicates enhanced product compliance and specific manufacturing traceability standards.
Direct substitutes include IRGP4062DPBF and IRGP4062D-EPBF. Verify pinout compatibility and electrical parameters before substitution. Cross-reference thermal characteristics to ensure adequate heat sinking.