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The IRGP4063D1-EPBF is a 600V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It operates in the TO-247AD package and supports continuous collector currents of 100A at 25°C and 60A at 100°C case temperature. The device features a typical saturation voltage of 1.65V at 48A and 25°C, with a maximum short-circuit withstand time of 5µs. It offers a positive VCE(on) temperature coefficient for parallel operation and maintains a junction temperature range from -40°C to +175°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the ordering suffix matches the specific TO-247AD package variant required for your design. Ensure compliance with RoHS standards and check for any recent product discontinuation notices or lifecycle status updates before finalizing procurement plans.
Select this IGBT when high efficiency across wide load ranges and switching frequencies is required. The low saturation voltage and optimized switching losses make it suitable for applications demanding robust thermal management. Consider the 5µs short-circuit tolerance if designing protection schemes without complex current limiting circuits.
This component belongs to International Rectifier's expanded line of 600V trench IGBTs, designed for industrial and commercial power conversion systems. It utilizes thin wafer technology to reduce both conduction and switching losses compared to previous generations. The part is part of a family including variants like the IRGP4063D1PBF, distinguished primarily by their physical package types.
The IRGP4063D1PBF serves as a functional equivalent utilizing the TO-247AC package instead of the TO-247AD form factor. Verify mechanical mounting constraints and lead dimensions when substituting between these two package styles.
The device supports a short-circuit withstand time of 5 microseconds under specified conditions.
Yes, it integrates an ultrafast soft recovery diode alongside the IGBT structure.
Yes, it exhibits a positive VCE(on) temperature coefficient, which aids in current sharing during parallel operation.