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The IRGP4063DPBF is a 600V n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and high efficiency. The device supports a continuous collector current of 48A at 100°C case temperature and withstands a clamped inductive load current of 192A. It features a maximum junction temperature of 175°C, a short circuit safe operating area (SCSOA) rating of 5μs, and a square reverse bias safe operating area (RBSOA).
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Select this component for designs requiring rugged transient performance and high efficiency across wide switching frequency ranges. The positive temperature coefficient facilitates reliable parallel operation for higher current capacity. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under varying case temperatures.
This part belongs to the IRGP series of 600V channel ultrafast IGBTs from Infineon Technologies (formerly International Rectifier). It is designed for industrial applications demanding robust performance. The device is housed in a TO-247AC through-hole package, suitable for high-power density designs where surface mount is not recommended.
IRGP4063D-EPbF
The device has a short circuit safe operating area (SCSOA) rating of 5 microseconds.
Yes, it features a positive VCE(on) temperature coefficient which ensures excellent current sharing when devices are operated in parallel.
No, the TO-247AC package used for this component is not recommended for surface mount applications.