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Product Detailed Parameters
- Description：IGBT 650V 90A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：144 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 48A
- Power - Max：325 W
- Switching Energy：1.7mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：145 nC
- Td (on/off) @ 25°C：70ns/140ns
- Test Condition：400V, 48A, 10Ohm, 15V
- Reverse Recovery Time (trr)：170 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
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Overview
The IRGP4760D-EPbF is a 650V Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, housed in a TO-247AD package. It supports a continuous collector current of 90A at 25°C and 60A at 100°C case temperature. The device features a maximum power dissipation of 325W at 25°C and operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a VCE(sat) of 1.7V at 48A, a short-circuit withstand time of 5.5µs, and a total gate charge of 96nC.
Feature Summary
- Features low saturation voltage and switching losses for high efficiency across wide application ranges.
- Includes a 5.5µs short-circuit safe operating area (SOA) capability for robust transient performance.
- Possesses a positive VCE(on) temperature coefficient to ensure excellent current sharing during parallel operation.
Applications
- Industrial Motor Drive
- Uninterruptible Power Supply (UPS)
- Solar Inverters
- Welding
Procurement Notes
Verify the specific ordering suffix to confirm the package variant. The EPBF designation corresponds to the TO-247AD package, whereas the standard PbF version uses TO-247AC. Confirm RoHS compliance status and industrial qualification level requirements against the project specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high voltage blocking and rugged short-circuit tolerance. The integrated ultrafast diode simplifies circuit topology by eliminating external freewheeling components. Ensure thermal management strategies account for the specified junction-to-case resistance values to maintain reliability under continuous load conditions.
Part Context
This device belongs to the International Rectifier IGBT portfolio, now part of Infineon Technologies. It utilizes trench technology to optimize conduction and switching characteristics. The product line targets high-power industrial applications where reliability and efficiency are critical design constraints.
Replacement Considerations
The IRGP4760DPbF serves as the primary alternative, differing only in the TO-247AC package form factor. Verify pinout compatibility and thermal interface dimensions when substituting between the AC and AD package types.
FAQ
What is the maximum short-circuit withstand time?
The device supports a short-circuit withstand time of 5.5 microseconds at a junction temperature of 150°C and a collector-emitter voltage up to 650V.
Does the device support parallel operation?
Yes, the positive VCE(on) temperature coefficient facilitates stable current sharing when multiple units are operated in parallel configurations.
What is the reverse recovery characteristic of the integrated diode?
The integrated diode is an ultrafast soft recovery type, designed to minimize switching losses and electromagnetic interference during turn-off transitions.
