IRL2203NPBF

Description：MOSFET N-CH 30V 116A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:fab6c7a77205 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRL2203NPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 116A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL2203NPBF

Description：MOSFET N-CH 30V 116A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3290 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：180W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRL2203NPBF

IRL2203NPBF

Single FETs, MOSFETs Overview

The IRL2203NPbF is a HEXFET N-channel enhancement mode power MOSFET in a TO-220AB package. It features a 30V drain-source breakdown voltage and an ultra-low on-resistance of 7.0mΩ at VGS=10V and ID=60A. The device supports a continuous drain current of 116A at 25°C case temperature, with a maximum pulsed drain current of 400A. Key electrical parameters include a gate threshold voltage of 1.0V, total gate charge of 60nC, and a single pulse avalanche energy rating of 1320mJ. Thermal resistance from junction to case is 0.85°C/W.

Single FETs, MOSFETs Feature Summary

Advanced processing technology for extremely low on-resistance per silicon area
Fully avalanche rated capability for ruggedized operation
Logic level compatible drive requirements for simple interface
Fast switching speed combined with dynamic dv/dt rating

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring high efficiency
Power conversion circuits utilizing logic level drivers
Systems demanding fast switching performance
Applications requiring fully avalanche rated components

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact Infineon Technologies part number IRL2203NPbF. Confirm the package type is TO-220AB and the suffix indicates lead-free construction. Ensure the supplier provides documentation confirming compliance with industrial market qualification standards. Cross-reference datasheet specifications against actual received units to validate electrical characteristics.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with low on-resistance is required. The TO-220AB package suits applications dissipating up to approximately 50 watts. Consider the 1.0V gate threshold voltage for compatibility with logic-level control signals. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. The series utilizes advanced processing techniques to achieve low on-resistance. The TO-220AB package is widely accepted in the industry for its balance of low thermal resistance and cost-effectiveness in commercial and industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Do not assume functional interchangeability with other HEXFET variants without verifying pinout and electrical limits.