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IRLZ44ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 51A D2PAK. Review the specifications below when checking this part for your BOM.
The IRLZ44ZS is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a D2-Pak (TO-263) surface-mount package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 51 A at 25°C. The device exhibits a maximum on-resistance of 13.5 mΩ at 10 V gate drive and 22.5 mΩ at 4.5 V. Key electrical parameters include a typical gate charge of 24 nC at 4.5 V, a gate-drain charge of 12 nC, and a junction-to-case thermal resistance of 1.87 K/W. It supports a maximum power dissipation of 80 W and operates within a temperature range of -55°C to 175°C.
Verify the component authenticity by checking the manufacturer's marking code against official Infineon documentation. Confirm the specific suffix 'ZS' corresponds to the D2-Pak package variant. Ensure that the ordering information matches the required voltage and current ratings for the target application circuit design.
Select this component when a surface-mount solution is required for 55V applications. The logic-level threshold allows efficient driving from standard 3.3V or 5V logic sources. Compare the on-resistance values at relevant gate voltages against system efficiency requirements. Consider the thermal resistance specifications for heat sink design in high-current scenarios.
This part belongs to the HEXFET family of power MOSFETs from Infineon. It serves as a surface-mount alternative to through-hole variants like the IRLZ44N. The D2-Pak package provides a balance between power handling capacity and PCB space efficiency compared to smaller SMD packages.
The IRLZ44N is a pin-compatible through-hole alternative with similar electrical characteristics but different packaging. Verify package dimensions and thermal interface requirements when substituting between surface-mount and through-hole technologies.
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