IS42S16100C1-7BLI-TR

Memory IC Overview

The IS42S16100C1 is a 16Mb Synchronous DRAM organized as 524,288 words by 16 bits across two independent banks. It operates with a single 3.3V supply and supports clock frequencies of 200, 166, and 143 MHz. The device features fully synchronous operation referenced to the positive clock edge, LV TTL interface compatibility, and programmable burst lengths including sequential and interleave sequences. It utilizes a pipeline architecture for high-speed data transfer and includes byte control via LDQM and UDQM pins.

Memory IC Feature Summary

• Dual internal bank architecture allowing simultaneous and independent operation controlled by A11
• Fully synchronous design with all signals referenced to the rising edge of the system clock
• Programmable burst length supporting 1, 2, 4, 8, or full page access modes
• Byte-level data masking capability through dedicated LDQM and UDQM input/output mask pins

Memory IC Applications

• High-performance embedded memory systems requiring pipelined data transfer
• Consumer electronics utilizing 3.3V logic interfaces
• Industrial control applications operating within specified temperature ranges
• Systems requiring independent dual-bank memory management

Memory IC Procurement Notes

Verify the specific speed grade suffix (e.g., -7BLI) against the required operating frequency and latency specifications. Confirm package type availability, such as 50-pin TSOP-II or 60-ball fBGA, matches the target PCB layout. Ensure the industrial temperature range variant is selected if operation below 0°C is required. Cross-reference the latest datasheet revision for any updates to absolute maximum ratings or electrical characteristics before finalizing orders.

Memory IC Selection Notes

Select this component when a 16-bit wide synchronous DRAM interface is required with dual-bank independence. Choose based on the necessary clock frequency performance tier and the preferred physical package format for the assembly process. Consider the LV TTL interface compatibility for direct connection to standard logic controllers without additional level shifting in most 3.3V environments.

Memory IC Part Context

This part belongs to ISSI's 16Mb Synchronous DRAM family, designed for applications demanding high-speed data throughput. It shares architectural similarities with other members of the series but is distinct in its specific organization and interface timing parameters. The device represents a solution for compact, high-density memory requirements in portable and industrial electronic devices.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical compatibility with existing designs before considering alternative manufacturers or different density parts from the same supplier.

Memory IC FAQ

How is the precharge command handled for individual versus both banks?

When the A10 pin is LOW during a precharge command, only the bank selected by A11 is precharged. If A10 is HIGH, both banks are precharged simultaneously.

What is the function of the CKE pin during power-down mode?

The CKE pin determines entry into power-down mode; dropping it from HIGH to LOW initiates the mode when both banks are idle, suppressing internal operations to reduce power dissipation.

How does the device handle burst termination?

Burst read and write operations can be forcibly terminated using the Burst Stop command, which stops data output after the CAS latency period has elapsed for reads.