Memory IC IS42S16160B-7T-TR product image

IS42S16160B-7T-TR

$5.86
  • Description:IC DRAM 256MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)

SKU:319bd1f13c79 Category: Brand:

  
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IS42S16160B-7T-TR is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 256MBIT PAR 54TSOP II. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S16160B-7T-TR

  • Description:IC DRAM 256MBIT PAR 54TSOP II
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:256Mbit
  • Memory Organization:16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:143 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:54-TSOP II
  • Access Time:5.4 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS42S16160B-7T-TR

IS42S16160B-7T-TR

Memory IC Overview

The IS42S16160B-7T-TR is a 256Mb Synchronous DRAM manufactured by ISSI. It features a 16M x 16 organization with a 54-pin TSOP-II package and operates at a maximum clock frequency of 143 MHz. The device utilizes LVTTL interface signals, supports programmable burst lengths of 1, 2, 4, or 8, and offers CAS latencies of 2 or 3 clocks. It includes auto-refresh, self-refresh, and power-down modes for energy efficiency.

Memory IC Feature Summary

  • Fully synchronous operation with all signals referenced to the positive clock edge
  • Internal bank architecture allows hiding row access and precharge times
  • Supports programmable burst sequences including sequential and interleave modes
  • Includes auto-refresh and self-refresh capabilities for data retention

Memory IC Applications

  • High-speed data transfer systems using pipeline architecture
  • Memory systems requiring 3.3V VDD and VDDQ power supplies
  • Applications utilizing LVTTL compatible interfaces
  • Systems requiring interleaved bank access for seamless random-access operations

Memory IC Procurement Notes

Verify the specific suffix 'T' against official datasheets to confirm temperature range and packaging details. Ensure compatibility with 3.3V logic levels and check for lead-free compliance requirements. Confirm that the 54-pin TSOP-II footprint matches the target PCB design constraints before finalizing orders.

Memory IC Selection Notes

Select this component when a 256Mb density with a 16-bit data bus width is required. It is suitable for designs needing 143 MHz operation speeds with LVTTL signaling. Consider the 54-pin TSOP-II package for surface-mount applications where BGA options are not feasible. Verify that the system can support the necessary refresh cycles and power management states.

Memory IC Part Context

This part belongs to the IS42S16160B series of 256Mb SDRAMs from Integrated Silicon Solution Inc. The series provides high-speed CMOS dynamic random-access memory designed for 3.3V systems. It is internally configured as a quad-bank DRAM, offering flexible configuration options for various memory controller architectures.

Memory IC Replacement Considerations

Check for IS42S16160L variants which may offer industrial temperature ranges. Verify pinout compatibility with existing designs if substituting with other 54-pin TSOP-II SDRAM packages. Ensure electrical characteristics such as voltage levels and timing parameters match the original system requirements.

IS42S16160B-7T-TRIS42S16160B-7T-TR
$5.86
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