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ISA250250N04LMDSXTMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is ISA250250N04LMDSXTMA1. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for ISA250250N04LMDSXTMA1
- Description：ISA250250N04LMDSXTMA1
- Series：OptiMOS™ 3
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5.9A (Ta), 7.9A (Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：720pF @ 20V
- Power - Max：1.4W (Ta), 2.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8-920
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for ISA250250N04LMDSXTMA1
FET, MOSFET Arrays Overview
The ISA250250N04LMDSXTMA1 is an OptiMOS™ 3 dual N-channel power MOSFET with a 40 V drain-source voltage rating. It features a maximum on-resistance of 25 mΩ at 10 V and 32 mΩ at 4.5 V, supporting a continuous drain current of 7.9 A at 25 °C. The device utilizes a PG-DSO-8 package and operates within a temperature range of -55 °C to 150 °C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a single package
- Logic level gate threshold for direct drive compatibility
- Superior thermal resistance characteristics
- 100% avalanche tested for ruggedness
FET, MOSFET Arrays Applications
- High-side and low-side switching circuits
- DC-DC converter topologies
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet before finalizing procurement orders.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring compact dual-switch solutions with low conduction losses. Evaluate the thermal resistance values relative to the PCB copper area to ensure junction temperatures remain within safe operating limits during operation.
FET, MOSFET Arrays Part Context
This part belongs to the OptiMOS™ 3 family, designed for efficient power switching. It integrates two N-channel MOSFETs into one package, simplifying circuit design by reducing component count and board space compared to discrete implementations.
FET, MOSFET Arrays Replacement Considerations
Consult official replacement lists or cross-reference tools for verified substitutes. Do not assume pin-compatible alternatives without confirming electrical parameters and package dimensions match the original specification.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
