ISZ053N08NM6ATMA1

ISZ053N08NM6ATMA1

$1.61
  • Description:TRENCH 40<-<100V
  • Series:-

SKU:20ee30cabdef Category: Brand:

  
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Product Detailed Parameters

  • Description:TRENCH 40<-<100V
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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ISZ053N08NM6ATMA1

Overview

The ISZ053N08NM6ATMA1 is an N-channel OptiMOS 6 power transistor with a drain-source voltage of 80 V and a continuous drain current of 90 A. It features a low on-resistance of 9.5 mΩ and a typical gate charge of 52 nC at 10 V. The device supports a maximum power dissipation of 150 W, operates within a temperature range of -55°C to 175°C, and utilizes a TO-252 surface-mount package.

Feature Summary

  • OptiMOS 6 technology provides very low on-resistance for enhanced efficiency
  • Excellent gate charge versus on-resistance product for optimized switching performance
  • Normal level N-channel configuration suitable for standard drive requirements

Applications

  • Telecommunications power supplies
  • Server power distribution
  • Solar energy systems
  • Battery management applications

Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific variant matches the required electrical characteristics and packaging format for the intended design implementation.

Selection Notes

Select this component when an 80 V rating and high current capacity are required in a compact surface-mount form factor. Consider the thermal performance and switching speed relative to the system's power density constraints and drive circuit capabilities.

Part Context

This device belongs to the OptiMOS 6 family, representing advanced silicon MOSFET technology from Infineon Technologies. It is designed to replace older generation power transistors by offering superior performance metrics within similar physical footprints for modern electronic designs.

Replacement Considerations

Consult official Infineon substitution guides for verified compatible alternatives. Ensure any replacement maintains identical voltage ratings, current handling, and package dimensions to preserve board layout integrity.

ISZ053N08NM6ATMA1ISZ053N08NM6ATMA1
$1.61
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