SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ISZ053N08NM6ATMA1 is an N-channel OptiMOS 6 power transistor with a drain-source voltage of 80 V and a continuous drain current of 90 A. It features a low on-resistance of 9.5 mΩ and a typical gate charge of 52 nC at 10 V. The device supports a maximum power dissipation of 150 W, operates within a temperature range of -55°C to 175°C, and utilizes a TO-252 surface-mount package.
Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific variant matches the required electrical characteristics and packaging format for the intended design implementation.
Select this component when an 80 V rating and high current capacity are required in a compact surface-mount form factor. Consider the thermal performance and switching speed relative to the system's power density constraints and drive circuit capabilities.
This device belongs to the OptiMOS 6 family, representing advanced silicon MOSFET technology from Infineon Technologies. It is designed to replace older generation power transistors by offering superior performance metrics within similar physical footprints for modern electronic designs.
Consult official Infineon substitution guides for verified compatible alternatives. Ensure any replacement maintains identical voltage ratings, current handling, and package dimensions to preserve board layout integrity.