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IV1D12010T2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Inventchip. Its product description is DIODE SIL CARB 1200V 30A TO2472. Review the specifications below when checking this part for your BOM.
The IV1D12010T2 is a Silicon Carbide (SiC) Schottky diode manufactured by Inventchip Technology. It features a 1200 V reverse voltage rating and a continuous forward current of 30 A. The device utilizes a TO-247-2 through-hole package, designed for high-power applications requiring low switching losses and high thermal efficiency. Operating temperatures range from -55°C to +175°C junction temperature.
Verify the specific datasheet version with Inventchip Technology or authorized distributors to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with existing thermal management solutions due to the high operating temperature rating of the SiC material.
Select this component for designs prioritizing high efficiency and reduced heat dissipation requirements in high-voltage environments. Compare the 30 A current rating against peak load demands to ensure adequate margin. Consider the TO-247-2 package constraints for PCB layout and mounting hardware.
Inventchip Technology specializes in Silicon Carbide power devices and IC solutions. The IV1D12010T2 belongs to their SiC Schottky diode portfolio, aimed at replacing traditional silicon rectifiers in demanding power electronics applications to improve system efficiency and power density.
Consult official substitution lists from Inventchip Technology for verified equivalents. Cross-reference key parameters such as voltage rating, current capacity, and package type when evaluating alternative components from other manufacturers.
The maximum operating junction temperature is +175°C.
It uses a TO-247-2 through-hole package.
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