Single Diodes IV1D12010T2 product image

IV1D12010T2

$9.91
  • Description:DIODE SIL CARB 1200V 30A TO2472
  • Series:-
  • Mfr:Inventchip
  • Package:Tube

SKU:3cabdcc2bfe2 Category: Brand:

  
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IV1D12010T2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Inventchip. Its product description is DIODE SIL CARB 1200V 30A TO2472. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IV1D12010T2

  • Description:DIODE SIL CARB 1200V 30A TO2472
  • Series:-
  • Mfr:Inventchip
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):30A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 1200 V
  • Capacitance @ Vr, F:575pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for IV1D12010T2

IV1D12010T2

Single Diodes Overview

The IV1D12010T2 is a Silicon Carbide (SiC) Schottky diode manufactured by Inventchip Technology. It features a 1200 V reverse voltage rating and a continuous forward current of 30 A. The device utilizes a TO-247-2 through-hole package, designed for high-power applications requiring low switching losses and high thermal efficiency. Operating temperatures range from -55°C to +175°C junction temperature.

Single Diodes Feature Summary

  • Utilizes Silicon Carbide semiconductor material for superior thermal performance and high-temperature operation.

Single Diodes Applications

  • High-frequency power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies

Single Diodes Procurement Notes

Verify the specific datasheet version with Inventchip Technology or authorized distributors to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with existing thermal management solutions due to the high operating temperature rating of the SiC material.

Single Diodes Selection Notes

Select this component for designs prioritizing high efficiency and reduced heat dissipation requirements in high-voltage environments. Compare the 30 A current rating against peak load demands to ensure adequate margin. Consider the TO-247-2 package constraints for PCB layout and mounting hardware.

Single Diodes Part Context

Inventchip Technology specializes in Silicon Carbide power devices and IC solutions. The IV1D12010T2 belongs to their SiC Schottky diode portfolio, aimed at replacing traditional silicon rectifiers in demanding power electronics applications to improve system efficiency and power density.

Single Diodes Replacement Considerations

Consult official substitution lists from Inventchip Technology for verified equivalents. Cross-reference key parameters such as voltage rating, current capacity, and package type when evaluating alternative components from other manufacturers.

Single Diodes FAQ

What is the maximum junction temperature for the IV1D12010T2?

The maximum operating junction temperature is +175°C.

What package type does the IV1D12010T2 use?

It uses a TO-247-2 through-hole package.

IV1D12010T2IV1D12010T2
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