IXA20I1200PB

Overview

The IXA20I1200PB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a Planar Technology (PT) design with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 20 A at 25°C. The device exhibits a maximum saturated collector-emitter voltage of 2.1 V at 15 V gate drive and 10 A collector current. Key switching parameters include a gate charge of 27 nC, turn-on energy of 1.1 mJ, and turn-off energy of 1.1 mJ under test conditions of 600 V, 10 A, and 100 Ω. The component is housed in a TO-220-3 through-hole package with a maximum power dissipation of 85 W and an operating junction temperature range of -40°C to 150°C.

Feature Summary

• Planar technology construction for optimized conduction and switching performance
• Integrated fast recovery anti-parallel diode capability within the module structure
• Robust thermal management via direct metal base plate for efficient heat sinking

Applications

• High-frequency switch-mode power supplies
• Motor control drives and inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix 'PB' against the manufacturer's latest datasheet to confirm pinout and packaging details, as suffixes often denote tape-and-reel or tube variations. Confirm RoHS compliance status and check for End-of-Life notices, as this component may be subject to obsolescence. Ensure the ordering quantity matches the manufacturer's standard packing unit to avoid partial reel issues.

Selection Notes

Select this component for applications requiring a balance between low conduction loss and manageable switching speed in the 1200V class. Compare the 2.1 V saturation voltage against alternative IGBTs to ensure thermal constraints are met within the TO-220-3 package limits. Evaluate the 27 nC gate charge against available driver capabilities to optimize switching frequency without excessive drive power requirements.

Part Context

The IXA20I1200PB belongs to IXYS's IXA series of discrete IGBTs, which are designed for general-purpose power switching. This series utilizes Planar Technology to provide reliable performance in medium-power applications. It serves as a standalone switching element, distinct from multi-chip modules like the MIXA series, offering a cost-effective solution for single-phase or half-bridge configurations.

Replacement Considerations

Direct replacements should match the 1200V rating, 20A current capacity, and TO-220-3 package. Verify that substitute devices have comparable Vce(sat) and gate charge specifications to maintain circuit efficiency. Check for pin-compatible alternatives from other manufacturers if IXYS discontinues production, ensuring thermal resistance values are equivalent.